N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon AUIRF7316QTR

RS Stock No.: 145-9565Brand: InfineonManufacturers Part No.: AUIRF7316QTR
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

4.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

23 nC @ 10 V

Transistor Material

Si

Height

1.5mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Country of Origin

Malaysia

Product details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 2.05

Each (On a Reel of 4000) (Exc. Vat)

€ 2.419

Each (On a Reel of 4000) (Including VAT)

N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon AUIRF7316QTR

€ 2.05

Each (On a Reel of 4000) (Exc. Vat)

€ 2.419

Each (On a Reel of 4000) (Including VAT)

N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon AUIRF7316QTR
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

4.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

23 nC @ 10 V

Transistor Material

Si

Height

1.5mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Country of Origin

Malaysia

Product details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.