Dual N-Channel MOSFET, 40 A, 25 V, 8-Pin TISON Infineon BSC0911NDATMA1

RS Stock No.: 133-9824Brand: InfineonManufacturers Part No.: BSC0911NDATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

25 V

Package Type

TISON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

+20 V

Width

6.1mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V, 7.7 nC @ 4.5 V

Height

1.1mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Infineon OptiMOS™ Dual Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

Dual N-Channel MOSFET, 40 A, 25 V, 8-Pin TISON Infineon BSC0911NDATMA1

P.O.A.

Dual N-Channel MOSFET, 40 A, 25 V, 8-Pin TISON Infineon BSC0911NDATMA1
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

25 V

Package Type

TISON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

+20 V

Width

6.1mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V, 7.7 nC @ 4.5 V

Height

1.1mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Infineon OptiMOS™ Dual Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.