N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220AB Infineon IRFB4228PBF

RS Stock No.: 124-9007Brand: InfineonManufacturers Part No.: IRFB4228PBF
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

83 A

Maximum Drain Source Voltage

150 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

72 nC @ 10 V

Height

8.77mm

Series

HEXFET

Minimum Operating Temperature

-40 °C

Country of Origin

Mexico

Product details

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 3.84

Each (In a Tube of 50) (Exc. Vat)

€ 4.531

Each (In a Tube of 50) (Including VAT)

N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220AB Infineon IRFB4228PBF

€ 3.84

Each (In a Tube of 50) (Exc. Vat)

€ 4.531

Each (In a Tube of 50) (Including VAT)

N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220AB Infineon IRFB4228PBF
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

83 A

Maximum Drain Source Voltage

150 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

72 nC @ 10 V

Height

8.77mm

Series

HEXFET

Minimum Operating Temperature

-40 °C

Country of Origin

Mexico

Product details

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.