N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 Infineon SPW47N60C3FKSA1

RS Stock No.: 911-4849Brand: InfineonManufacturers Part No.: SPW47N60C3FKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

415 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.9mm

Typical Gate Charge @ Vgs

252 nC @ 10 V

Width

5.3mm

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Height

20.95mm

Country of Origin

Philippines

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 20.30

Each (In a Tube of 30) (Exc. Vat)

€ 23.954

Each (In a Tube of 30) (Including VAT)

N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 Infineon SPW47N60C3FKSA1

€ 20.30

Each (In a Tube of 30) (Exc. Vat)

€ 23.954

Each (In a Tube of 30) (Including VAT)

N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 Infineon SPW47N60C3FKSA1
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
30 - 30€ 20.30€ 609.00
60 - 60€ 19.59€ 587.70
90+€ 18.64€ 559.20

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

415 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.9mm

Typical Gate Charge @ Vgs

252 nC @ 10 V

Width

5.3mm

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Height

20.95mm

Country of Origin

Philippines

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.