N-Channel MOSFET, 287 A, 60 V, 4 + Tab-Pin DFN onsemi NVMFS5C604NLWFAF

RS Stock No.: 141-2085Brand: ON SemiconductorManufacturers Part No.: NVMFS5C604NLWFAFT1G
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

287 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Number of Elements per Chip

1

Width

6.1mm

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Series

NVMFS5C604NL

Minimum Operating Temperature

-55 °C

Height

1.05mm

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

N-Channel MOSFET, 287 A, 60 V, 4 + Tab-Pin DFN onsemi NVMFS5C604NLWFAF

P.O.A.

N-Channel MOSFET, 287 A, 60 V, 4 + Tab-Pin DFN onsemi NVMFS5C604NLWFAF
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

287 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Number of Elements per Chip

1

Width

6.1mm

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Series

NVMFS5C604NL

Minimum Operating Temperature

-55 °C

Height

1.05mm

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor