Infineon BFP183WH6327XTSA1 NPN RF Bipolar Transistor, 65 mA, 12 V, 4-Pin SOT-343
Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
65 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
450 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8000 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
0.9 x 2 x 1.25mm
Height
0.9mm
Country of Origin
Malaysia
Product details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
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€ 0.51
Each (In a Pack of 50) (Exc. VAT)
€ 0.602
Each (In a Pack of 50) (inc. VAT)
Standard
50
€ 0.51
Each (In a Pack of 50) (Exc. VAT)
€ 0.602
Each (In a Pack of 50) (inc. VAT)
Standard
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
65 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
450 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8000 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
0.9 x 2 x 1.25mm
Height
0.9mm
Country of Origin
Malaysia
Product details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products