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N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S

RS Stock No.: 133-2801Brand: ToshibaManufacturers Part No.: TK7P65W,RQ(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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€ 11.30

€ 1.13 Each (In a Pack of 10) (Exc. VAT)

€ 13.33

€ 1.333 Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S

10

Available in multiples of 10
10€ 11.30
20€ 22.60
30€ 33.90
40€ 45.20
50€ 56.50
60€ 67.80
70€ 79.10
80€ 90.40
90€ 101.70
100€ 113.00
110€ 124.30
120€ 135.60
130€ 146.90
140€ 158.20
150€ 169.50

€ 11.30

€ 1.13 Each (In a Pack of 10) (Exc. VAT)

€ 13.33

€ 1.333 Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S
Stock information temporarily unavailable.

10

Available in multiples of 10
10€ 11.30
20€ 22.60
30€ 33.90
40€ 45.20
50€ 56.50
60€ 67.80
70€ 79.10
80€ 90.40
90€ 101.70
100€ 113.00
110€ 124.30
120€ 135.60
130€ 146.90
140€ 158.20
150€ 169.50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more