BJT & Bipolar Transistors

A Bipolar Transistor or BJT (Bipolar Junction Transistor) is a solid state, three-pin device made from three layers of silicon. A BJT is designed to amplify current, bipolar transistors can also function as a switch. There are two main types of transistor, PNP (positive negative positive) or NPN (negative positive negative).
How a Bipolar transistor is made
A bipolar transistor is made by joining two signal diodes back to back creating two PN junctions connected in series, sharing a common P or N terminal. By nature, silicon does not normally conduct electricity well. However, when silicon is treated with certain chemicals or impurities we can make the material and electrons behave in a different way. This process is called doping. The doping process improves the semiconductors ability to conduct electricity.
What does a bipolar transistor do?
As we said before a bipolar transistor has two possible functions, switching, and amplification. Due to the devices three layers of doped semiconductor material, supplying the transistor with a signal voltage enables the discrete component to act as an insulator or a conductor. This clever change provides the transistors with two basic functions, switching (digital) electronics or amplification (analog) electronics.
Types of transistor
Transistors are available in panel, surface and through hole mounting options in plastic package or metal can versions. All have three terminals or pins, the Base, the Collector, and the Emitter.
Where are bipolar transistors used?
Transistors are one of the most widely used discrete components in electronic designs and circuits. Transistors are used for the amplification of all types of electrical signals in circuits made up of individual components rather than ICs (integrated circuits).
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Part Details Brand Transistor Type Maximum DC Collector Current Maximum Collector Emitter Voltage Package Type Mounting Type Maximum Power Dissipation Minimum DC Current Gain Transistor Configuration Maximum Collector Base Voltage Maximum Emitter Base Voltage Maximum Operating Frequency Pin Count Number of Elements per Chip Dimensions Maximum Collector Emitter Saturation Voltage Maximum Base Emitter Saturation Voltage Height Length Width Minimum Operating Temperature Maximum Operating Temperature Diameter Transistor Material
ON Semi NSVF4015SG4T1G NPN Transistor, 100 mA, 12 V, 4-Pin SC-82FL
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ON Semiconductor NPN 100 mA 12 V SC-82FL Surface Mount 450 mW 60 Single 20 V 2 V 1 GHz 4 1 2 x 1.6 x 0.85mm - - 0.85mm 2mm 1.6mm -55 °C +150 °C - -
ON Semi NSVF4017SG4T1G NPN Transistor, 100 mA, 12 V, 4-Pin SC-82FL
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ON Semiconductor NPN 100 mA 12 V SC-82FL Surface Mount 450 mW 60 Single 20 V 2 V 1 GHz 4 1 2 x 1.6 x 0.85mm - - 0.85mm 2mm 1.6mm -55 °C +150 °C - -
ON Semi NSVF4015SG4T1G NPN Transistor, 100 mA, 12 V, 4-Pin SC-82FL ON Semiconductor NPN 100 mA 12 V SC-82FL Surface Mount 450 mW 60 Single 20 V 2 V 1 GHz 4 1 2 x 1.6 x 0.85mm - - 0.85mm 2mm 1.6mm -55 °C +150 °C - -
ON Semi NSVF4017SG4T1G NPN Transistor, 100 mA, 12 V, 4-Pin SC-82FL ON Semiconductor NPN 100 mA 12 V SC-82FL Surface Mount 450 mW 60 Single 20 V 2 V 1 GHz 4 1 2 x 1.6 x 0.85mm - - 0.85mm 2mm 1.6mm -55 °C +150 °C - -
Nexperia BC817-16W,115 NPN Transistor, 500 mA, 45 V, 3-Pin SOT-323
  • € 0.03
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Nexperia NPN 500 mA 45 V SOT-323 Surface Mount 200 mW 100 Single 50 V 5 V 100 MHz 3 1 2.2 x 1.35 x 1mm 700 mV - 1mm 2.2mm 1.35mm -65 °C +150 °C - -
ON Semi MMBT2222ALT1G NPN Transistor, 600 (Continuous) mA, 30 V, 3-Pin SOT-23
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ON Semiconductor NPN 600 (Continuous) mA 30 V SOT-23 Surface Mount 225 mW 35 Single 60 V 5 V 100 MHz 3 1 3.04 x 1.4 x 1.01mm 1.6 V dc 2.6 V dc 1.01mm 3.04mm 1.4mm -55 °C +150 °C - Si
ON Semi MMUN2111LT1G PNP Transistor, 100 (Continuous) mA, 50 V, 3-Pin SOT-23
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ON Semiconductor PNP 100 (Continuous) mA 50 V SOT-23 Surface Mount 338 mW 35 Single 50 V - - 3 1 3.04 x 1.4 x 1.01mm 0.25 V dc - 1.01mm 3.04mm 1.4mm -55 °C +150 °C - -
ON Semi MMUN2235LT1G NPN Transistor, 100 (Continuous) mA, 50 V, 3-Pin SOT-23
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ON Semiconductor NPN 100 (Continuous) mA 50 V SOT-23 Surface Mount 400 mW 80 Single 50 V - - 3 1 3.04 x 1.4 x 1.01mm 0.25 V dc - 1.01mm 3.04mm 1.4mm -55 °C +150 °C - -
ON Semi MMBT2222AWT1G NPN Transistor, 600 (Continuous) mA, 40 V, 3-Pin SC-70
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ON Semiconductor NPN 600 (Continuous) mA 40 V SC-70 Surface Mount 150 mW 35 Single 75 V 6 V 100 MHz 3 1 2.2 x 1.35 x 0.9mm 1 V dc 2 V dc 0.9mm 2.2mm 1.35mm -55 °C +150 °C - Si
ON Semi MUN5111T1G PNP Transistor, 100 (Continuous) mA, 50 V, 3-Pin SC-70
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ON Semiconductor PNP 100 (Continuous) mA 50 V SC-70 Surface Mount 310 mW 35 Single 50 V - - 3 1 2.2 x 1.35 x 0.9mm 0.25 V dc - 0.9mm 2.2mm 1.35mm -55 °C +150 °C - -
ON Semi MUN5211T1G NPN Transistor, 100 (Continuous) mA, 50 V, 3-Pin SC-70
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ON Semiconductor NPN 100 (Continuous) mA 50 V SC-70 Surface Mount 310 mW 35 Single 50 V - - 3 1 2.2 x 1.35 x 0.9mm 0.25 V dc - 0.9mm 2.2mm 1.35mm -55 °C +150 °C - -
ON Semi MUN5233T1G NPN Transistor, 100 (Continuous) mA, 50 V, 3-Pin SC-70
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ON Semiconductor NPN 100 (Continuous) mA 50 V SC-70 Surface Mount 310 mW 80 Single 50 V - - 3 1 2.2 x 1.35 x 0.9mm 0.25 V dc - 0.9mm 2.2mm 1.35mm -55 °C +150 °C - -
ON Semi MMBT3904WT1G NPN Transistor, 200 (Continuous) mA, 40 V, 3-Pin SC-70
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ON Semiconductor NPN 200 (Continuous) mA 40 V SC-70 Surface Mount 150 mW 30 Single 60 V 6 V 100 MHz 3 1 2.2 x 1.35 x 0.9mm 0.3 V dc 0.95 V dc 0.9mm 2.2mm 1.35mm -55 °C +150 °C - Si
ON Semi MUN2214T1G NPN Transistor, 100 (Continuous) mA, 50 V, 3-Pin SC-59
  • € 0.03
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ON Semiconductor NPN 100 (Continuous) mA 50 V SC-59 Surface Mount 338 mW 80 Single 50 V - - 3 1 3.1 x 1.7 x 1.2mm 0.25 V dc - 1.2mm 3.1mm 1.7mm -55 °C +150 °C - -
ON Semi MMBT2369ALT1G NPN Transistor, 200 (Continuous) mA, 15 V, 3-Pin SOT-23
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ON Semiconductor NPN 200 (Continuous) mA 15 V SOT-23 Surface Mount 225 mW 20 Single 40 V 4.5 V 100 MHz 3 1 3.04 x 1.4 x 1.01mm 0.5 V dc 1.6 V dc 1.01mm 3.04mm 1.4mm -55 °C +150 °C - Si
ON Semi MMBT5087LT1G PNP Transistor, 50 (Continuous) mA, -50 V, 3-Pin SOT-23
  • € 0.06
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ON Semiconductor PNP 50 (Continuous) mA -50 V SOT-23 Surface Mount 300 mW 250 Single -50 V -3 V 20 MHz 3 1 3.04 x 1.4 x 1.01mm -0.3 V dc 0.85 V dc 1.01mm 3.04mm 1.4mm -55 °C +150 °C - Si
ON Semi MUN5313DW1T1G Dual Transistor, 100 (Continuous) mA, 50 V, 6-Pin SOT-363
  • € 0.06
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ON Semiconductor NPN, PNP 100 (Continuous) mA 50 V SOT-363 Surface Mount 385 mW 80 - 50 V - - 6 2 2.2 x 1.35 x 1mm 0.25 V - 1mm 2.2mm 1.35mm -55 °C +150 °C - -
ON Semi MUN5333DW1T1G Dual Transistor, 100 (Continuous) mA, 50 V, 6-Pin SOT-363
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ON Semiconductor NPN, PNP 100 (Continuous) mA 50 V SOT-363 Surface Mount 385 mW 80 - 50 V - - 6 2 2.2 x 1.35 x 1mm 0.25 V - 1mm 2.2mm 1.35mm -55 °C +150 °C - -
ON Semi MUN5335DW1T1G Dual Transistor, 100 (Continuous) mA, 50 V, 6-Pin SOT-363
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ON Semiconductor NPN, PNP 100 (Continuous) mA 50 V SOT-363 Surface Mount 385 mW 80 - 50 V - - 6 2 2.2 x 1.35 x 1mm 0.25 V - 1mm 2.2mm 1.35mm -55 °C +150 °C - -
ON Semi MUN5233DW1T1G Dual NPN Transistor, 100 (Continuous) mA, 50 V, 6-Pin SOT-363
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ON Semiconductor NPN 100 (Continuous) mA 50 V SOT-363 Surface Mount 250 mW 80 - 50 V - - 6 2 2.2 x 1.35 x 1mm 0.25 V - 1mm 2.2mm 1.35mm -55 °C +150 °C - -
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