Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
42 nC @ 10 V
Width
4.6mm
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 9.46
€ 4.73 Each (In a Pack of 2) (Exc. VAT)
€ 11.16
€ 5.581 Each (In a Pack of 2) (inc. VAT)
Standard
2
€ 9.46
€ 4.73 Each (In a Pack of 2) (Exc. VAT)
€ 11.16
€ 5.581 Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | € 4.73 | € 9.46 |
10 - 98 | € 4.04 | € 8.08 |
100 - 498 | € 3.28 | € 6.56 |
500 - 998 | € 2.96 | € 5.92 |
1000+ | € 2.55 | € 5.10 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
42 nC @ 10 V
Width
4.6mm
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details