STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220FP STF5NK100Z

RS Stock No.: 687-5320Brand: STMicroelectronicsManufacturers Part No.: STF5NK100Z
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220FP

Series

MDmesh, SuperMESH

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

42 nC @ 10 V

Width

4.6mm

Height

9.3mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

€ 9.46

€ 4.73 Each (In a Pack of 2) (Exc. VAT)

€ 11.16

€ 5.581 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220FP STF5NK100Z
Select packaging type

€ 9.46

€ 4.73 Each (In a Pack of 2) (Exc. VAT)

€ 11.16

€ 5.581 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220FP STF5NK100Z
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
2 - 8€ 4.73€ 9.46
10 - 98€ 4.04€ 8.08
100 - 498€ 3.28€ 6.56
500 - 998€ 2.96€ 5.92
1000+€ 2.55€ 5.10

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220FP

Series

MDmesh, SuperMESH

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

42 nC @ 10 V

Width

4.6mm

Height

9.3mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more