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STMicroelectronics MDmesh N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N

RS Stock No.: 760-9796Brand: STMicroelectronicsManufacturers Part No.: STW48NM60N
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

124 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

€ 11.88

€ 11.88 Each (Exc. VAT)

€ 14.02

€ 14.02 Each (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N
Select packaging type

€ 11.88

€ 11.88 Each (Exc. VAT)

€ 14.02

€ 14.02 Each (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N
Stock information temporarily unavailable.
Select packaging type

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QuantityUnit price
1 - 9€ 11.88
10 - 24€ 11.10
25 - 99€ 10.78
100 - 249€ 9.49
250+€ 9.30

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

124 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more