Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 91.50
€ 1.83 Each (Supplied on a Reel) (Exc. VAT)
€ 107.97
€ 2.159 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
€ 91.50
€ 1.83 Each (Supplied on a Reel) (Exc. VAT)
€ 107.97
€ 2.159 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
50 - 245 | € 1.83 | € 9.15 |
250 - 495 | € 1.51 | € 7.55 |
500 - 1245 | € 1.26 | € 6.30 |
1250+ | € 1.17 | € 5.85 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details