ISSI IS42S16160G-7TLI, SDRAM 256Mbit Surface Mount, 143MHz, 54-Pin TSOP
Technical Document
Specifications
Brand
ISSIMemory Size
256Mbit
Organisation
16M x 16 bit
Data Rate
143MHz
Data Bus Width
16bit
Address Bus Width
15bit
Number of Bits per Word
16bit
Maximum Random Access Time
5.4ns
Number of Words
16M
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
54
Dimensions
22.42 x 10.29 x 1.05mm
Height
1.05mm
Length
22.42mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+85 °C
Maximum Operating Supply Voltage
3.6 V
Width
10.29mm
Minimum Operating Supply Voltage
3 V
Product details
Dynamic RAM, ISSI
ISSI SDR SDRAM range offers synchronous interface with programmable CAS Latency (2/3 clocks). High speed data transfer is achieved using the pipeline process and the Synchronous DRAM SDR series offer burst read/write and burst read/single write making them ideally for use in computers applications. ISSI’s SDR SDRAM devices come in a range of different organisations and memory sizes, operating on a 3.3V power supply.
LVTTL interface
Input/output signals refer to the rising edge of the clock input
Programmable burst sequence: Sequential/Interleave; Programmable burst length
Random column address every clock cycle
Self-refresh and Auto Refresh mode
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P.O.A.
Production pack (Tray)
1
P.O.A.
Production pack (Tray)
1
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Technical Document
Specifications
Brand
ISSIMemory Size
256Mbit
Organisation
16M x 16 bit
Data Rate
143MHz
Data Bus Width
16bit
Address Bus Width
15bit
Number of Bits per Word
16bit
Maximum Random Access Time
5.4ns
Number of Words
16M
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
54
Dimensions
22.42 x 10.29 x 1.05mm
Height
1.05mm
Length
22.42mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+85 °C
Maximum Operating Supply Voltage
3.6 V
Width
10.29mm
Minimum Operating Supply Voltage
3 V
Product details
Dynamic RAM, ISSI
ISSI SDR SDRAM range offers synchronous interface with programmable CAS Latency (2/3 clocks). High speed data transfer is achieved using the pipeline process and the Synchronous DRAM SDR series offer burst read/write and burst read/single write making them ideally for use in computers applications. ISSI’s SDR SDRAM devices come in a range of different organisations and memory sizes, operating on a 3.3V power supply.
LVTTL interface
Input/output signals refer to the rising edge of the clock input
Programmable burst sequence: Sequential/Interleave; Programmable burst length
Random column address every clock cycle
Self-refresh and Auto Refresh mode
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products