Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
150 V
Series
HiperFET, Polar
Package Type
TO-247AD
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
600 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+175 °C
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 17.56
€ 17.56 Each (Exc. VAT)
€ 20.72
€ 20.72 Each (inc. VAT)
Standard
1
€ 17.56
€ 17.56 Each (Exc. VAT)
€ 20.72
€ 20.72 Each (inc. VAT)
Standard
1
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Please check again later.
Quantity | Unit price |
---|---|
1 - 4 | € 17.56 |
5 - 19 | € 16.36 |
20 - 49 | € 15.64 |
50 - 99 | € 13.56 |
100+ | € 13.21 |
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
150 V
Series
HiperFET, Polar
Package Type
TO-247AD
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
600 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+175 °C
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS