onsemi Dual N/P-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 NTJD1155LT1G
Technical Document
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
400 mW
Transistor Configuration
N+P Loadswitch
Maximum Gate Source Voltage
+8 V
Number of Elements per Chip
2
Width
1.35mm
Length
2.2mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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€ 750.00
€ 0.25 Each (On a Reel of 3000) (Exc. VAT)
€ 885.00
€ 0.295 Each (On a Reel of 3000) (inc. VAT)
3000
€ 750.00
€ 0.25 Each (On a Reel of 3000) (Exc. VAT)
€ 885.00
€ 0.295 Each (On a Reel of 3000) (inc. VAT)
3000
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Technical Document
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
400 mW
Transistor Configuration
N+P Loadswitch
Maximum Gate Source Voltage
+8 V
Number of Elements per Chip
2
Width
1.35mm
Length
2.2mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products