SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V

RS Stock No.: 201-0887Brand: STMicroelectronicsManufacturers Part No.: SCTW90N65G2V
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

650 V

Series

SCTW90

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

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€ 53.32

Each (Exc. Vat)

€ 62.92

Each (Including VAT)

SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V
Select packaging type

€ 53.32

Each (Exc. Vat)

€ 62.92

Each (Including VAT)

SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 4€ 53.32
5 - 9€ 50.88
10 - 24€ 48.91
25 - 49€ 46.86
50+€ 45.28

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

650 V

Series

SCTW90

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more