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STMicroelectronics STGP7NC60HD IGBT, 25 A 600 V, 3-Pin TO-220, Through Hole

RS Stock No.: 178-1479Brand: STMicroelectronicsManufacturers Part No.: STGP7NC60HD
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Technical Document

Specifications

Maximum Continuous Collector Current

25 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 9.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Stock information temporarily unavailable.

€ 77.00

€ 1.54 Each (In a Tube of 50) (Exc. VAT)

€ 90.86

€ 1.817 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STGP7NC60HD IGBT, 25 A 600 V, 3-Pin TO-220, Through Hole

€ 77.00

€ 1.54 Each (In a Tube of 50) (Exc. VAT)

€ 90.86

€ 1.817 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STGP7NC60HD IGBT, 25 A 600 V, 3-Pin TO-220, Through Hole
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in

Technical Document

Specifications

Maximum Continuous Collector Current

25 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 9.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in