Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.4mm
Width
4.6mm
Transistor Material
Si
Typical Gate Charge @ Vgs
183 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
15.75mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 10.60
Each (Supplied in a Tube) (Exc. Vat)
€ 12.51
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
1
€ 10.60
Each (Supplied in a Tube) (Exc. Vat)
€ 12.51
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 4 | € 10.60 |
5 - 9 | € 10.18 |
10 - 24 | € 9.35 |
25 - 49 | € 8.51 |
50+ | € 8.19 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.4mm
Width
4.6mm
Transistor Material
Si
Typical Gate Charge @ Vgs
183 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
15.75mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.