Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
13.7 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
8.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.35mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Height
4.46mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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€ 16.50
€ 3.30 Each (In a Pack of 5) (Exc. VAT)
€ 19.47
€ 3.894 Each (In a Pack of 5) (inc. VAT)
5
€ 16.50
€ 3.30 Each (In a Pack of 5) (Exc. VAT)
€ 19.47
€ 3.894 Each (In a Pack of 5) (inc. VAT)
5
Buy in bulk
Quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | € 3.30 | € 16.50 |
25 - 45 | € 2.92 | € 14.60 |
50 - 245 | € 2.83 | € 14.15 |
250 - 495 | € 2.74 | € 13.70 |
500+ | € 2.74 | € 13.70 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
13.7 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
8.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.35mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Height
4.46mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details