Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Number of Elements per Chip
1
Width
5.02mm
Height
20.95mm
Country of Origin
China
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
€ 536.10
€ 17.87 Each (In a Tube of 30) (Exc. VAT)
€ 632.60
€ 21.087 Each (In a Tube of 30) (inc. VAT)
30
€ 536.10
€ 17.87 Each (In a Tube of 30) (Exc. VAT)
€ 632.60
€ 21.087 Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Tube |
---|---|---|
30 - 120 | € 17.87 | € 536.10 |
150 - 270 | € 16.33 | € 489.90 |
300+ | € 15.60 | € 468.00 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Number of Elements per Chip
1
Width
5.02mm
Height
20.95mm
Country of Origin
China
Product details