N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG20PBF
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
€ 2.02
Each (Supplied as a Tape) (Exc. VAT)
€ 2.38
Each (Supplied as a Tape) (inc. VAT)
Production pack (Tape)
1
€ 2.02
Each (Supplied as a Tape) (Exc. VAT)
€ 2.38
Each (Supplied as a Tape) (inc. VAT)
Production pack (Tape)
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 9 | € 2.02 |
| 10 - 49 | € 1.70 |
| 50 - 99 | € 1.67 |
| 100 - 249 | € 1.58 |
| 250+ | € 1.49 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products