Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Country of Origin
Malaysia
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 139.00
€ 1.39 Each (Supplied on a Reel) (Exc. VAT)
€ 164.02
€ 1.64 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
€ 139.00
€ 1.39 Each (Supplied on a Reel) (Exc. VAT)
€ 164.02
€ 1.64 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
100 - 240 | € 1.39 | € 13.90 |
250 - 490 | € 1.29 | € 12.90 |
500 - 990 | € 1.23 | € 12.30 |
1000+ | € 1.04 | € 10.40 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Country of Origin
Malaysia
Product details