Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Series
TrenchFET
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 152.00
€ 0.76 Each (Supplied on a Reel) (Exc. VAT)
€ 179.36
€ 0.897 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
200
€ 152.00
€ 0.76 Each (Supplied on a Reel) (Exc. VAT)
€ 179.36
€ 0.897 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
200
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 200 - 480 | € 0.76 | € 15.20 |
| 500 - 980 | € 0.73 | € 14.60 |
| 1000 - 1980 | € 0.66 | € 13.20 |
| 2000+ | € 0.63 | € 12.60 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Series
TrenchFET
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


