Vishay P-Channel MOSFET, 11.5 A, 30 V, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3

RS Stock No.: 818-1384PBrand: VishayManufacturers Part No.: SI7129DN-T1-GE3
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

52.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

47.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-50 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

€ 113.00

€ 1.13 Each (Supplied on a Reel) (Exc. VAT)

€ 133.34

€ 1.333 Each (Supplied on a Reel) (inc. VAT)

Vishay P-Channel MOSFET, 11.5 A, 30 V, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3
Select packaging type

€ 113.00

€ 1.13 Each (Supplied on a Reel) (Exc. VAT)

€ 133.34

€ 1.333 Each (Supplied on a Reel) (inc. VAT)

Vishay P-Channel MOSFET, 11.5 A, 30 V, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Reel
100 - 180€ 1.13€ 22.60
200 - 480€ 1.10€ 22.00
500 - 980€ 1.01€ 20.20
1000+€ 0.95€ 19.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

52.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

47.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-50 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more