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Vishay SQ Rugged P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC SQ4431EY-T1_GE3

RS Stock No.: 819-3920PBrand: VishayManufacturers Part No.: SQ4431EY-T1_GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

30 V

Series

SQ Rugged

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.55mm

Country of Origin

China

Product details

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

€ 22.00

€ 1.10 Each (Supplied on a Reel) (Exc. VAT)

€ 25.96

€ 1.298 Each (Supplied on a Reel) (inc. VAT)

Vishay SQ Rugged P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC SQ4431EY-T1_GE3
Select packaging type

€ 22.00

€ 1.10 Each (Supplied on a Reel) (Exc. VAT)

€ 25.96

€ 1.298 Each (Supplied on a Reel) (inc. VAT)

Vishay SQ Rugged P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC SQ4431EY-T1_GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

30 V

Series

SQ Rugged

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.55mm

Country of Origin

China

Product details

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more