Infineon P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Series
Si4435DYPbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4mm
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Typical Power Gain
0
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 110.00
€ 1.10 Each (Supplied on a Reel) (Exc. VAT)
€ 129.80
€ 1.298 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
€ 110.00
€ 1.10 Each (Supplied on a Reel) (Exc. VAT)
€ 129.80
€ 1.298 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 240 | € 1.10 | € 11.00 |
| 250 - 490 | € 1.07 | € 10.70 |
| 500 - 990 | € 1.04 | € 10.40 |
| 1000+ | € 0.98 | € 9.80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Series
Si4435DYPbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4mm
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Typical Power Gain
0
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products