Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
2.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Country of Origin
Malaysia
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
€ 42.50
€ 0.85 Each (In a Tube of 50) (Exc. VAT)
€ 50.15
€ 1.003 Each (In a Tube of 50) (inc. VAT)
50
€ 42.50
€ 0.85 Each (In a Tube of 50) (Exc. VAT)
€ 50.15
€ 1.003 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | € 0.85 | € 42.50 |
100 - 450 | € 0.60 | € 30.00 |
500 - 950 | € 0.54 | € 27.00 |
1000 - 1950 | € 0.47 | € 23.50 |
2000+ | € 0.44 | € 22.00 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
2.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Country of Origin
Malaysia
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.