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STMicroelectronics N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STP26N60DM6

RS Stock No.: 192-4661Brand: STMicroelectronicsManufacturers Part No.: STP26N60DM6
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

15 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

195 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

15.75mm

Country of Origin

China

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Stock information temporarily unavailable.

€ 265.00

€ 5.30 Each (In a Tube of 50) (Exc. VAT)

€ 312.70

€ 6.254 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STP26N60DM6

€ 265.00

€ 5.30 Each (In a Tube of 50) (Exc. VAT)

€ 312.70

€ 6.254 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STP26N60DM6
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
50 - 50€ 5.30€ 265.00
100 - 200€ 5.23€ 261.50
250 - 450€ 5.17€ 258.50
500 - 950€ 5.11€ 255.50
1000+€ 5.04€ 252.00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

15 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

195 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

15.75mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more