Toshiba SSM6 Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 SSM6N35FU(TE85L,F)

RS Stock No.: 695-4849Brand: ToshibaManufacturers Part No.: SSM6N35FU(TE85L,F)
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

20 V

Package Type

US6

Series

SSM6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Length

1.25mm

Maximum Operating Temperature

+150 °C

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

2

Height

0.9mm

Minimum Operating Temperature

-55 °C

Country of Origin

Japan

Product details

Dual MOSFET N-Channel SSM6Nxx, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

€ 3.50

€ 0.35 Each (In a Pack of 10) (Exc. VAT)

€ 4.13

€ 0.413 Each (In a Pack of 10) (inc. VAT)

Toshiba SSM6 Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 SSM6N35FU(TE85L,F)

10

Available in multiples of 10
10€ 3.50
20€ 7.00
30€ 10.50
40€ 14.00
50€ 17.50
60€ 21.00
70€ 24.50
80€ 28.00
90€ 31.50
100€ 35.00
110€ 38.50
120€ 42.00
130€ 45.50
140€ 49.00
150€ 52.50

€ 3.50

€ 0.35 Each (In a Pack of 10) (Exc. VAT)

€ 4.13

€ 0.413 Each (In a Pack of 10) (inc. VAT)

Toshiba SSM6 Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 SSM6N35FU(TE85L,F)
Stock information temporarily unavailable.

10

Available in multiples of 10
10€ 3.50
20€ 7.00
30€ 10.50
40€ 14.00
50€ 17.50
60€ 21.00
70€ 24.50
80€ 28.00
90€ 31.50
100€ 35.00
110€ 38.50
120€ 42.00
130€ 45.50
140€ 49.00
150€ 52.50

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

20 V

Package Type

US6

Series

SSM6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Length

1.25mm

Maximum Operating Temperature

+150 °C

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

2

Height

0.9mm

Minimum Operating Temperature

-55 °C

Country of Origin

Japan

Product details

Dual MOSFET N-Channel SSM6Nxx, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more