Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
€ 20.65
€ 4.13 Each (In a Pack of 5) (Exc. VAT)
€ 24.37
€ 4.873 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 20.65
€ 4.13 Each (In a Pack of 5) (Exc. VAT)
€ 24.37
€ 4.873 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | € 4.13 | € 20.65 |
25 - 45 | € 3.37 | € 16.85 |
50 - 120 | € 3.12 | € 15.60 |
125 - 245 | € 2.90 | € 14.50 |
250+ | € 2.65 | € 13.25 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details