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Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S

RS Stock No.: 827-6113Brand: ToshibaManufacturers Part No.: TK12E60W,S1VX(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

4.45mm

Height

15.1mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

€ 20.65

€ 4.13 Each (In a Pack of 5) (Exc. VAT)

€ 24.37

€ 4.873 Each (In a Pack of 5) (inc. VAT)

Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S
Select packaging type

€ 20.65

€ 4.13 Each (In a Pack of 5) (Exc. VAT)

€ 24.37

€ 4.873 Each (In a Pack of 5) (inc. VAT)

Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 20€ 4.13€ 20.65
25 - 45€ 3.37€ 16.85
50 - 120€ 3.12€ 15.60
125 - 245€ 2.90€ 14.50
250+€ 2.65€ 13.25

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

4.45mm

Height

15.1mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more