Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.4 A
Maximum Drain Source Voltage
250 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
14.9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.07mm
Country of Origin
China
€ 13.40
€ 2.68 Each (In a Pack of 5) (Exc. VAT)
€ 15.81
€ 3.162 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 13.40
€ 2.68 Each (In a Pack of 5) (Exc. VAT)
€ 15.81
€ 3.162 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 2.68 | € 13.40 |
50 - 95 | € 2.27 | € 11.35 |
100 - 495 | € 1.80 | € 9.00 |
500 - 995 | € 1.58 | € 7.90 |
1000+ | € 1.45 | € 7.25 |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.4 A
Maximum Drain Source Voltage
250 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
14.9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.07mm
Country of Origin
China