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Vishay N-Channel MOSFET, 37 A, 60 V, 3-Pin TO-220FP IRFIZ48GPBF

RS Stock No.: 708-4799PBrand: VishayManufacturers Part No.: IRFIZ48GPBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

110 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.8mm

Country of Origin

China

Product details

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

€ 227.00

€ 4.54 Each (Supplied in a Tube) (Exc. VAT)

€ 267.86

€ 5.357 Each (Supplied in a Tube) (inc. VAT)

Vishay N-Channel MOSFET, 37 A, 60 V, 3-Pin TO-220FP IRFIZ48GPBF
Select packaging type

€ 227.00

€ 4.54 Each (Supplied in a Tube) (Exc. VAT)

€ 267.86

€ 5.357 Each (Supplied in a Tube) (inc. VAT)

Vishay N-Channel MOSFET, 37 A, 60 V, 3-Pin TO-220FP IRFIZ48GPBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
50 - 120€ 4.54€ 22.70
125 - 245€ 4.35€ 21.75
250 - 495€ 4.29€ 21.45
500+€ 3.91€ 19.55

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

110 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.8mm

Country of Origin

China

Product details

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more