Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 5
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
10.58mm
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
169 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
€ 11,720.00
€ 5.86 Each (On a Reel of 2000) (Exc. VAT)
€ 13,829.60
€ 6.915 Each (On a Reel of 2000) (inc. VAT)
2000
€ 11,720.00
€ 5.86 Each (On a Reel of 2000) (Exc. VAT)
€ 13,829.60
€ 6.915 Each (On a Reel of 2000) (inc. VAT)
Stock information temporarily unavailable.
2000
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 5
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
10.58mm
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
169 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V