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onsemi P-Channel MOSFET, 2.9 A, 60 V, 6-Pin TSOP-6 NTGS5120PT1G

RS Stock No.: 780-0579PBrand: onsemiManufacturers Part No.: NTGS5120PT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

60 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

142 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.7mm

Number of Elements per Chip

1

Transistor Material

Si

Length

3.1mm

Typical Gate Charge @ Vgs

18.1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Stock information temporarily unavailable.

€ 13.50

€ 0.54 Each (Supplied on a Reel) (Exc. VAT)

€ 15.93

€ 0.637 Each (Supplied on a Reel) (inc. VAT)

onsemi P-Channel MOSFET, 2.9 A, 60 V, 6-Pin TSOP-6 NTGS5120PT1G
Select packaging type

€ 13.50

€ 0.54 Each (Supplied on a Reel) (Exc. VAT)

€ 15.93

€ 0.637 Each (Supplied on a Reel) (inc. VAT)

onsemi P-Channel MOSFET, 2.9 A, 60 V, 6-Pin TSOP-6 NTGS5120PT1G
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

60 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

142 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.7mm

Number of Elements per Chip

1

Transistor Material

Si

Length

3.1mm

Typical Gate Charge @ Vgs

18.1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more