Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
7 nC @ 10 V
Transistor Material
Si
Width
3.5mm
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Height
1.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 15.40
€ 1.54 Each (In a Pack of 10) (Exc. VAT)
€ 18.17
€ 1.817 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 15.40
€ 1.54 Each (In a Pack of 10) (Exc. VAT)
€ 18.17
€ 1.817 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
10 - 20 | € 1.54 | € 15.40 |
30 - 90 | € 1.48 | € 14.80 |
100 - 490 | € 1.13 | € 11.30 |
500 - 990 | € 0.98 | € 9.80 |
1000+ | € 0.79 | € 7.90 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
7 nC @ 10 V
Transistor Material
Si
Width
3.5mm
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Height
1.8mm
Minimum Operating Temperature
-55 °C
Product details