Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
87 nC @ 10 V
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.15mm
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 141.00
€ 4.70 Each (In a Tube of 30) (Exc. VAT)
€ 166.38
€ 5.546 Each (In a Tube of 30) (inc. VAT)
30
€ 141.00
€ 4.70 Each (In a Tube of 30) (Exc. VAT)
€ 166.38
€ 5.546 Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Tube |
---|---|---|
30 - 60 | € 4.70 | € 141.00 |
90 - 480 | € 3.81 | € 114.30 |
510 - 960 | € 3.44 | € 103.20 |
990 - 4980 | € 2.96 | € 88.80 |
5010+ | € 2.90 | € 87.00 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
87 nC @ 10 V
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.15mm
Product details