Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12.7 A
Maximum Drain Source Voltage
25 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
17.5 nC @ 4.5 V, 37 nC @ 10 V
Width
4mm
Transistor Material
Si
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 74.00
€ 1.48 Each (Supplied on a Reel) (Exc. VAT)
€ 87.32
€ 1.746 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
€ 74.00
€ 1.48 Each (Supplied on a Reel) (Exc. VAT)
€ 87.32
€ 1.746 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
50 - 245 | € 1.48 | € 7.40 |
250 - 495 | € 1.36 | € 6.80 |
500 - 1245 | € 1.29 | € 6.45 |
1250+ | € 1.23 | € 6.15 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12.7 A
Maximum Drain Source Voltage
25 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
17.5 nC @ 4.5 V, 37 nC @ 10 V
Width
4mm
Transistor Material
Si
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details