Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
47.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-50 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 113.00
€ 1.13 Each (Supplied on a Reel) (Exc. VAT)
€ 133.34
€ 1.333 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
€ 113.00
€ 1.13 Each (Supplied on a Reel) (Exc. VAT)
€ 133.34
€ 1.333 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
100 - 180 | € 1.13 | € 22.60 |
200 - 480 | € 1.10 | € 22.00 |
500 - 980 | € 1.01 | € 20.20 |
1000+ | € 0.95 | € 19.00 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
47.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-50 °C
Country of Origin
China
Product details