STMicroelectronics MJE340 NPN Transistor, 500 mA, 300 V, 3-Pin SOT-32

RS Stock No.: 168-6815Brand: STMicroelectronicsManufacturers Part No.: MJE340
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Technical Document

Specifications

Transistor Type

NPN

Maximum DC Collector Current

500 mA

Maximum Collector Emitter Voltage

300 V

Package Type

SOT-32

Mounting Type

Through Hole

Maximum Power Dissipation

2.8 W

Minimum DC Current Gain

30

Transistor Configuration

Single

Maximum Collector Base Voltage

300 V

Maximum Emitter Base Voltage

3 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

10.8 x 7.8 x 2.7mm

Country of Origin

Malaysia

Product details

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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Stock information temporarily unavailable.

€ 36.50

€ 0.73 Each (In a Tube of 50) (Exc. VAT)

€ 43.07

€ 0.861 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MJE340 NPN Transistor, 500 mA, 300 V, 3-Pin SOT-32

€ 36.50

€ 0.73 Each (In a Tube of 50) (Exc. VAT)

€ 43.07

€ 0.861 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MJE340 NPN Transistor, 500 mA, 300 V, 3-Pin SOT-32
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
50 - 50€ 0.73€ 36.50
100 - 450€ 0.50€ 25.00
500 - 950€ 0.44€ 22.00
1000 - 1950€ 0.41€ 20.50
2000+€ 0.38€ 19.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Transistor Type

NPN

Maximum DC Collector Current

500 mA

Maximum Collector Emitter Voltage

300 V

Package Type

SOT-32

Mounting Type

Through Hole

Maximum Power Dissipation

2.8 W

Minimum DC Current Gain

30

Transistor Configuration

Single

Maximum Collector Base Voltage

300 V

Maximum Emitter Base Voltage

3 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

10.8 x 7.8 x 2.7mm

Country of Origin

Malaysia

Product details

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in