Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
Taiwan, Province Of China
€ 22.70
€ 2.27 Each (In a Pack of 10) (Exc. VAT)
€ 26.79
€ 2.679 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 22.70
€ 2.27 Each (In a Pack of 10) (Exc. VAT)
€ 26.79
€ 2.679 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | € 2.27 | € 22.70 |
100 - 490 | € 1.95 | € 19.50 |
500 - 990 | € 1.73 | € 17.30 |
1000+ | € 1.54 | € 15.40 |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
Taiwan, Province Of China