Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1

RS Stock No.: 262-5863Brand: InfineonManufacturers Part No.: IPD028N06NF2SATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

139 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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€ 12.95

€ 2.59 Each (In a Pack of 5) (Exc. VAT)

€ 15.28

€ 3.056 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1
Select packaging type

€ 12.95

€ 2.59 Each (In a Pack of 5) (Exc. VAT)

€ 15.28

€ 3.056 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
5 - 45€ 2.59€ 12.95
50 - 120€ 2.18€ 10.90
125 - 245€ 2.05€ 10.25
250 - 495€ 1.95€ 9.75
500+€ 1.51€ 7.55

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

139 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more