Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.38mm
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 112.00
€ 2.24 Each (Supplied on a Reel) (Exc. VAT)
€ 132.16
€ 2.643 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
€ 112.00
€ 2.24 Each (Supplied on a Reel) (Exc. VAT)
€ 132.16
€ 2.643 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
50 - 120 | € 2.24 | € 11.20 |
125 - 245 | € 2.05 | € 10.25 |
250 - 495 | € 1.95 | € 9.75 |
500+ | € 1.86 | € 9.30 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.38mm
Country of Origin
China
Product details