Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
640 mA, 870 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.3 Ω, 700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
530 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Width
1.25mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Height
0.6mm
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Stock information temporarily unavailable.
Please check again later.
P.O.A.
Production pack (Reel)
50
P.O.A.
Production pack (Reel)
50
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
640 mA, 870 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.3 Ω, 700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
530 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Width
1.25mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Height
0.6mm
Country of Origin
China
Product details