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P-Channel MOSFET, 3 A, 20 V, 3-Pin Smini3-G1-B Panasonic MTM231232LBF

RS Stock No.: 169-8020Brand: PanasonicManufacturers Part No.: MTM231232LBF
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Technical Document

Specifications

Brand

Panasonic

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

20 V

Package Type

Smini3-G1-B

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

1.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Height

0.8mm

Series

MTM

Country of Origin

Malaysia

Product details

P-Channel MOSFET, Panasonic

MOSFET Transistors, Panasonic

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P.O.A.

P-Channel MOSFET, 3 A, 20 V, 3-Pin Smini3-G1-B Panasonic MTM231232LBF

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

P-Channel MOSFET, 3 A, 20 V, 3-Pin Smini3-G1-B Panasonic MTM231232LBF
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Panasonic

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

20 V

Package Type

Smini3-G1-B

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

1.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Height

0.8mm

Series

MTM

Country of Origin

Malaysia

Product details

P-Channel MOSFET, Panasonic

MOSFET Transistors, Panasonic

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more