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ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX

RS Stock No.: 177-6458Brand: ROHMManufacturers Part No.: R6520ENX
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Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

R6520ENX

Package Type

TO-220FM

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

4.8mm

Length

10.3mm

Typical Gate Charge @ Vgs

61 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

15.4mm

Country of Origin

Japan

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Stock information temporarily unavailable.

€ 11.98

€ 5.99 Each (In a Pack of 2) (Exc. VAT)

€ 14.14

€ 7.068 Each (In a Pack of 2) (inc. VAT)

ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX

€ 11.98

€ 5.99 Each (In a Pack of 2) (Exc. VAT)

€ 14.14

€ 7.068 Each (In a Pack of 2) (inc. VAT)

ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
2 - 8€ 5.99€ 11.98
10 - 48€ 5.36€ 10.72
50 - 98€ 5.30€ 10.60
100 - 248€ 5.20€ 10.40
250+€ 5.17€ 10.34

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

R6520ENX

Package Type

TO-220FM

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

4.8mm

Length

10.3mm

Typical Gate Charge @ Vgs

61 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

15.4mm

Country of Origin

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more