Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Series
DeepGate, STripFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
17 nC @ 5 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.65mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 12.80
€ 1.28 Each (In a Pack of 10) (Exc. VAT)
€ 15.10
€ 1.51 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 12.80
€ 1.28 Each (In a Pack of 10) (Exc. VAT)
€ 15.10
€ 1.51 Each (In a Pack of 10) (inc. VAT)
Standard
10
Buy in bulk
Quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | € 1.28 | € 12.80 |
50 - 90 | € 1.25 | € 12.50 |
100 - 240 | € 1.13 | € 11.30 |
250 - 490 | € 1.04 | € 10.40 |
500+ | € 1.01 | € 10.10 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Series
DeepGate, STripFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
17 nC @ 5 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.65mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.