P-Channel MOSFET, 2.5 A, 20 V, 3-Pin PICOSTAR Texas Instruments CSD25481F4

RS Stock No.: 827-4925Brand: Texas InstrumentsManufacturers Part No.: CSD25481F4
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Technical Document

Specifications

Brand

Texas Instruments

Channel Type

P

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

20 V

Package Type

PICOSTAR

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1mm

Typical Gate Charge @ Vgs

0.913 nC @ 4.5 V

Width

0.6mm

Transistor Material

Si

Series

FemtoFET

Minimum Operating Temperature

-55 °C

Height

0.35mm

Product details

P-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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P.O.A.

P-Channel MOSFET, 2.5 A, 20 V, 3-Pin PICOSTAR Texas Instruments CSD25481F4
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

P-Channel MOSFET, 2.5 A, 20 V, 3-Pin PICOSTAR Texas Instruments CSD25481F4
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Texas Instruments

Channel Type

P

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

20 V

Package Type

PICOSTAR

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1mm

Typical Gate Charge @ Vgs

0.913 nC @ 4.5 V

Width

0.6mm

Transistor Material

Si

Series

FemtoFET

Minimum Operating Temperature

-55 °C

Height

0.35mm

Product details

P-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more