Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
560 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
6.1mm
Number of Elements per Chip
1
Height
2.3mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET N-channel, TK8 & TK9 Series, Toshiba
MOSFET Transistors, Toshiba
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€ 17.30
€ 1.73 Each (In a Pack of 10) (Exc. VAT)
€ 20.41
€ 2.041 Each (In a Pack of 10) (inc. VAT)
10
€ 17.30
€ 1.73 Each (In a Pack of 10) (Exc. VAT)
€ 20.41
€ 2.041 Each (In a Pack of 10) (inc. VAT)
10
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
560 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
6.1mm
Number of Elements per Chip
1
Height
2.3mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details