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Diodes Inc Dual N/P-Channel MOSFET, 7 A, 8.5 A, 30 V, 8-Pin SOIC DMC3021LSD-13

RS Stock No.: 751-4067PBrand: DiodesZetexManufacturers Part No.: DMC3021LSD-13
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Technical Document

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

7 A, 8.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32 mΩ, 53 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16.1 nC @ 10 V, 21.1 nC @ 4.5 V

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Country of Origin

China

Product details

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

€ 67.50

€ 0.54 Each (Supplied on a Reel) (Exc. VAT)

€ 79.65

€ 0.637 Each (Supplied on a Reel) (inc. VAT)

Diodes Inc Dual N/P-Channel MOSFET, 7 A, 8.5 A, 30 V, 8-Pin SOIC DMC3021LSD-13
Select packaging type

€ 67.50

€ 0.54 Each (Supplied on a Reel) (Exc. VAT)

€ 79.65

€ 0.637 Each (Supplied on a Reel) (inc. VAT)

Diodes Inc Dual N/P-Channel MOSFET, 7 A, 8.5 A, 30 V, 8-Pin SOIC DMC3021LSD-13
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Reel
125 - 600€ 0.54€ 13.50
625 - 1225€ 0.44€ 11.00
1250+€ 0.38€ 9.50

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

7 A, 8.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32 mΩ, 53 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16.1 nC @ 10 V, 21.1 nC @ 4.5 V

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Country of Origin

China

Product details

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more