Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
7 A, 8.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ, 53 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16.1 nC @ 10 V, 21.1 nC @ 4.5 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.5mm
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 67.50
€ 0.54 Each (Supplied on a Reel) (Exc. VAT)
€ 79.65
€ 0.637 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
125
€ 67.50
€ 0.54 Each (Supplied on a Reel) (Exc. VAT)
€ 79.65
€ 0.637 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
125
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
125 - 600 | € 0.54 | € 13.50 |
625 - 1225 | € 0.44 | € 11.00 |
1250+ | € 0.38 | € 9.50 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
7 A, 8.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ, 53 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16.1 nC @ 10 V, 21.1 nC @ 4.5 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.5mm
Country of Origin
China
Product details