Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
9.3 A, 9.6 A
Maximum Drain Source Voltage
35 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.9 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
2
Length
6.7mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V, 19.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 63.00
€ 0.63 Each (Supplied on a Reel) (Exc. VAT)
€ 74.34
€ 0.743 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
€ 63.00
€ 0.63 Each (Supplied on a Reel) (Exc. VAT)
€ 74.34
€ 0.743 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
100 - 480 | € 0.63 | € 12.60 |
500 - 980 | € 0.57 | € 11.40 |
1000+ | € 0.54 | € 10.80 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
9.3 A, 9.6 A
Maximum Drain Source Voltage
35 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.9 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
2
Length
6.7mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V, 19.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details