Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.2mm
Typical Gate Charge @ Vgs
21.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 146.00
€ 0.73 Each (Supplied on a Reel) (Exc. VAT)
€ 172.28
€ 0.861 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
200
€ 146.00
€ 0.73 Each (Supplied on a Reel) (Exc. VAT)
€ 172.28
€ 0.861 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
200
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
200 - 480 | € 0.73 | € 14.60 |
500 - 1980 | € 0.66 | € 13.20 |
2000+ | € 0.57 | € 11.40 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.2mm
Typical Gate Charge @ Vgs
21.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details